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Поиск Datasheets |
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| F1107 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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F1107 Datasheet
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Постоянная ссылка на эту страницу |
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F1107 и другие |
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| Компонент | Описание | Производитель | PDF |
| FX2C1-80S-1.27DSL |
1.27mm Pitch Multi-function Two Piece Connector |
Hirose Electric |
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| FX2C2-100S-1.27DSA |
1.27mm Pitch Multi-function Two Piece Connector |
Hirose Electric |
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| 5GSR14-B-80T-25.000 |
14 pin Dual-in-Line Sine Wave VCXO |
EUROQUARTZ limited |
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| F1116 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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| 87381-1263 |
2.00mm (.079) Pitch Milli-Grid Receptacle, Surface Mount, Top Entry, 0.76lm (30l) Gold (Au) Plating, with Cap, without Locating Pegs, 12 Circuits, Lead-free |
Molex Electronics Ltd. |
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